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Comparative Assessment of Failure Rates for SiC, GaN and Si MOSFETs with Operation in the Third Quadrant

This paper illustrates the reliability advantage for using synchronous rectification with various semiconductor technologies. The comparative results are shown for a buck converter with and without a second FET control. The temperature evaluation is performed for various load current levels using proven models in PSIM. Finally, the reliability and failure rates are calculated following the MIL-HDBK-217F (notice 2 of February 28th, 1995) procedure.

Tudorel Leampăr
Technical University of Iași
Romania

Dorin Octavian Neacșu
Technical University of Iași
Romania